This cookie is set by GDPR Cookie Consent plugin. The cookie is used to store the user consent for the cookies in the category 'Other. The cookies is used to store the user consent for the cookies in the category 'Necessary'. The cookie is set by GDPR cookie consent to record the user consent for the cookies in the category 'Functional'. The cookie is used to store the user consent for the cookies in the category 'Analytics'. These cookies ensure basic functionalities and security features of the website, anonymously. Necessary cookies are absolutely essential for the website to function properly. With the IXYS power MOSFET and IGBT products, the ICD drivers offer IXYS’ customers the whole system solution in a one-stop shop, which includes the Zilog line of MCUs. Nathan Zommer, CEO and CTO of IXYS Corporation. It is designed and produced in our internal wafer fabrication facility on the proven advanced SOI process,” commented Dr. “This product complements the full selection of power driver ICs that we have developed and introduced to the power management market in the last 3 years. The IX2120B’s 1400 V absolute maximum rating provides additional margin for high voltage applications. High voltage level-shift circuitry allows low voltage logic signals to drive IGBTs in a high side configuration operating up to 1200 V.

The IX2120 is configured with independent high-side and low-side referenced output channels, both of which can source and sink 2 A. The IX2120B is a high voltage, half-bridge gate driver integrated circuit designed to drive discrete power MOSFETs and IGBTs that operate up to 1200 V.

H bridge gate driver circuit